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Scaling behavior of large scale growth of the microcrystalline silicon films

W. ZHAO1,2, J. CHEN3,* , S. SONG2, L. XU2, T. HONG2, X. ZHANG2

Affiliation

  1. School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Technology, South China No rmal University, Guangzhou, China , 510006, People’s Republic of China
  2. College of Engineering, South China agricultural university, Guangzhou, 510642, People’s Republic of China
  3. School of Physics and Telecommunication Engineering, Laboratory of Quantum Information Technology, South China No rmal University, Guangzhou, China, 510006, People’s Republic of China

Abstract

An important concern in the deposition of thin microcrystalline silicon (μc-Si) films is to obtain the dynamic scaling exponent. We have analyzed the dynamic scaling exponent of μc-Si thin films on different substrates using surface profilometry. The surface roughness of the thin microcrystalline silicon films and the different substrates both are shown and compared. The results reveals that the abnormal dynamic exponent of thin film on the stainless steel substrate account for shadow effect, and the dynamic exponents of thin films on the c-Si substrate and the glass substrate imply the change of growth mechanism with distance from center..

Keywords

Microcrystalline Silicon, scaling, Surfaces and interfaces, Growth mechanism.

Citation

W. ZHAO, J. CHEN, S. SONG, L. XU, T. HONG, X. ZHANG, Scaling behavior of large scale growth of the microcrystalline silicon films, Optoelectronics and Advanced Materials - Rapid Communications, 5, 3, March 2011, pp.231-234 (2011).

Submitted at: Feb. 4, 2011

Accepted at: March 16, 2011