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S tudy of surface cleaning before passivation and rear boron doping on high efficiency PERL solar cells

WENJIA LI1, ZHENJIAO WANG2, PEIYU HAN2, YONGQIAN WANG3, ZHENGRONG SHI3,4, GUOHUA LI1,4,*

Affiliation

  1. Jiangnan University, Wuxi 214122, China
  2. Kingstone Semiconductor Co., Ltd, Shanghai 201203, China
  3. Suntech Power Co., Ltd, Wuxi 214028, China
  4. Jiangsu ( Suntech ) Institute for Photovoltaic Wuxi 214028, China

Abstract

T wo cleaning met hods (SC 1,2 and SPM) before passivation and four boron sources two kinds of spin on boron dopant and two types of PECVD deposited boron dopant and three kinds of rear PECVD deposited boron dopant layers (abbreviated as SiO 2 ( B), SiN x (B) and a Si ( a re investigated SPM was selected as the cost effective cleaning method . PECVD deposited p type layer doped by diborane ( B 2 H 6 was chosen. SiO 2 (B) layers with different thicknesses were investigated and 100nm i s suitable. Moreover , SiN x (B) layers with different refractive ind ic es were studied and 2.1 is better. Finally, f iring conditions were d iscuss ed for cells with a Si ( 19.8% efficiency was achieved with 400 ℃℃, 1100mm/min firing.

Keywords

PERL solar cells, Surface cleaning, Boron source, Boron dopant layer.

Citation

WENJIA LI, ZHENJIAO WANG, PEIYU HAN, YONGQIAN WANG, ZHENGRONG SHI, GUOHUA LI, S tudy of surface cleaning before passivation and rear boron doping on high efficiency PERL solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 10, 3-4, March-April 2016, pp.159-166 (2016).

Submitted at: Feb. 9, 2015

Accepted at: April 5, 2016