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S tructural and optoelectronic properties of ZnO Al fi lms with various thicknesses deposited by DC pulse magnetron sputtering

YING WANG1,2,* , WEIWEI JIANG1,2, WANYU DING1,2, YUN WANG3, SHOU PENG3, WEIPING CHAI1,2

Affiliation

  1. School of Materials Science and Engineering , Dalian Jiaotong University, Dalian 116028, China
  2. Engineering Research Center of Optoelectronic Materials and Devices Education Department of Liaoning Province, Dalian 116028, China
  3. State Key Laboratory of Advanced Technology for Float Glass Bengbu 23 3018, China

Abstract

Transparent conductive ZnO:Al films with various thicknesses between 40 and 500 nm were deposit ed by direct current pulse magnetron sputtering at 270 The influence of film thickness on the crystal structure, surface morphology, optoelectronic properties w as analyzed systematically. The crystal quality and the electrical properties of the films were improved with the increase of film thickness. The average transmittances in the visible region of a ll the films were over 90% regardless of film thickness. And the transmittance in the UV region decreased with increasing the film thickness. The grain size and roughness of films increased with the increasing film thickness.

Keywords

ZnO:Al , Thin films, Optoelectronic materials, Thickness Sputtering.

Citation

YING WANG, WEIWEI JIANG, WANYU DING, YUN WANG, SHOU PENG, WEIPING CHAI, S tructural and optoelectronic properties of ZnO Al fi lms with various thicknesses deposited by DC pulse magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.960-964 (2012).

Submitted at: July 19, 2012

Accepted at: Oct. 30, 2012