"

Cookies ussage consent

I agree.

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

Room-temperature continuous-wave operation of InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2.3μm

ZHAN GUO LI1, MING HUI YOU2,* , XIN GAO1, GUOJUN LIU1, ZHONG LIANG QIAO1, LIN LI1, YI QU1, BAO XUE BO1, XIAO HUI MA1

Affiliation

  1. National Key Laboratory on High Power Semiconductor Lasers , Changchun University of Science and Technology, Changchun 130022, China
  2. Information Technology College , Jilin Agricultural University, Changchun 130033, China

Abstract

2.3  m wavelength InGaAsSb/AlGaAsSb quantum well s(QWs) diode lasers (LDs ) had been fabricated and characterized, with cavity lengths of 1000  m and stripe width of 15 0  m. By carefully designing and realizing experimentally the active quantum well region, t he high output performance was achieved with the threshold current densi t y of the device is as low as 3 39 A/cm 2 . The vertical and parallel divergent angles were θ ┴ 63 ° and θ 31 ° , respectively. The continuous wave operati ng up to 632 mW at room temperature (RT) w as achieved.

Keywords

Continuous-wave (CW) operating, InGaAsSb AlGaAsSb laser diodes (LDs), Room temperature (RT), Quantum-well (MBE).

Citation

ZHAN GUO LI, MING HUI YOU, XIN GAO, GUOJUN LIU, ZHONG LIANG QIAO, LIN LI, YI QU, BAO XUE BO, XIAO HUI MA, Room-temperature continuous-wave operation of InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2.3μm, Optoelectronics and Advanced Materials - Rapid Communications, 8, 11-12, November-December 2014, pp.1013-1015 (2014).

Submitted at: Sept. 29, 2014

Accepted at: Nov. 13, 2014