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A. KUMAR1,* , A. SINGH1, R. KUMAR1, M. KUMAR1, D. KUMAR1
The barrier capability of amorphous MoN thin film was investigated against Cu diffusion. The MoN layers were reactively sputtered of 50 nm by using a different nitrogen flow rates. The phase identification was evaluated by X-ray diffractometer (XRD), four probe method and scanning electron microscope (SEM). Results indicate that the amorphous 50 nm MoN layer act as a good diffusion barrier upto 600 ˚C for cooper metallization..
Reactive d. c. sputtering, Diffusion barrier, Copper metallization.
A. KUMAR, A. SINGH, R. KUMAR, M. KUMAR, D. KUMAR, Reactively sputtered amorphous MoN film as a diffusion barrier for copper metallization, Optoelectronics and Advanced Materials - Rapid Communications, 5, 1, January 2011, pp.54-57 (2011).
Submitted at: Dec. 18, 2010
Accepted at: Jan. 26, 2011
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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