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K. NEYVASAGAM1,* , V. RAMAKRISHNAN2, C. SANJEEVARAJA3, N. SOUNDARARAJAN1
Thin films of cupric telluride (CuTe) of thickness 100nm and 200nm have been prepared by thermal evaporation technique, deposited at the rate of 15.3 Α/sec on to well-cleaned glass substrate kept at 300 K under vacuum of better than 10- 5mbar. The bulk sample of CuTe also has been taken for investigations. The deposited films were annealed at 375 K for one hour and then used for characterization. Raman spectra of CuTe bulk material and thin films of CuTe have been recorded. X ray diffraction studies confirmed that the composition and the polycrystalline nature of CuTe films. Raman bands at 231 cm-1, 240 cm-1 and 259 cm-1, were observed on both thin films and bulk sample of CuTe. The Raman peak position of CuTe films did not change appreciably, whereas the peak intensity has been increased. The grain size of CuTe thin films, estimated by Atomic Force Microscopy (AFM) measurements, is around 40 nm.
CuTe, Thin films, Thermal evaporation, XRD, AFM, Raman Spectra.
K. NEYVASAGAM, V. RAMAKRISHNAN, C. SANJEEVARAJA, N. SOUNDARARAJAN, Raman studies on Cupric Telluride (CuTe) thin films, Optoelectronics and Advanced Materials - Rapid Communications, 1, 7, July 2007, pp.319-321 (2007).
Submitted at: March 12, 2007
Accepted at: June 26, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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