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M. C. RAO1,*
Thin films of LiCoO2 and LiTixCo1-xO2 were prepared by pulsed laser deposition technique. Raman studies were performed with respect to their deposition parameters i.e. substrate temperature (Ts), oxygen partial pressure (pO2) and target composition in the deposition chamber. The Raman data consist of a series of broad bands located between 400 and 700 cm-1 for LiCoO2 and LiTixCo1-xO2 films. The Raman band located at 592 cm-1 can be viewed as the symmetric Co-O stretching vibration of CoO6 groups. This band is assigned to the A1g symmetry. The RS peak position at 484 cm-1 derives from the Eg species. The symmetric motions involve Co-O stretching and O-Co-O bending vibrations. The I484 /I592 increased with a decrease in the degree of the c-axis orientation of the films. The film deposited at 700 0C in pO2 = 100 mTorr, indicating that the film had no preferred orientation. The Raman peaks observed for the LiTixCo1-xO2 films at 594 cm-1 and 485 cm-1 are ascribed to Raman active modes A1g and Eg respectively. The Raman modes are observed to be slightly broader than that of pure LiCoO2 films due to polyhedra distortion in pristine LiCoO2, indicating the incorporation of Ti into Co sites. The influence of titanium doping on the Raman peaks has been systematically studied.
LiCoO2 thin films, LiTixCo1-xO2 thin films, PLD, Substrate temperature, Target composition and Raman.
M. C. RAO, Raman investigations on laser ablated LiCoO2 and LiTixCo1-xO2 thin film cathodes, Optoelectronics and Advanced Materials - Rapid Communications, 4, 12, December 2010, pp.2088-2091 (2010).
Submitted at: Nov. 18, 2010
Accepted at: Nov. 29, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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