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Quantum confinement and electron capture analysis in GaN multiple quantum well structures

K. TALELE1, D. S. PATIL1,*

Affiliation

  1. Department of Electronics, North Maharashtra University, Jalgaon [Maharashtra], India

Abstract

Quantum confinement and electron capture analysis have been carried out to enhance the performance of GaN multiple quantum well structures through the optimization of physical, structural and material parameters. Self-consistent convergence of eigen energy has been achieved to have its accurate value for varying aluminum mole fractions in the AlGaN barrier regions. Solutions of the wave function intensity have been obtained using quantum transmitting boundary method and transfer matrix method. The confinement factor was deduced to be 0.8681 for 30% aluminum mole fraction where as for 5% Aluminum concentration it was found to be 0.5435. The oscillatory nature of electron capture time with change of Aluminum mole fraction has been explored using standard Fermi Golden rule based calculations. It is inferred from our analysis that aluminum material composition of barrier strongly affects the quantum confinement.

Keywords

Quantum confinement. GaN, Multiple quantum well.

Citation

K. TALELE, D. S. PATIL, Quantum confinement and electron capture analysis in GaN multiple quantum well structures, Optoelectronics and Advanced Materials - Rapid Communications, 1, 12, December 2007, pp.693-697 (2007).

Submitted at: Oct. 25, 2007

Accepted at: Nov. 27, 2007