Abstract
High density of pyramidal three-dimensional (3D) nano-islands of InN material deposited on AlN /quartz surface with an
average aspect ratio of about 0.43 was observed by means of atomic force microscopy (AFM) imaging. The coatings were
obtained by reactive radio-frequency (RF) magnetron sputtering method. It was identified a transition from two-dimensional
(2D) to 3D growth mode of the InN material. The optical, structural and morphological characterization data are presented.
Keywords
Indium nitride, Pyramidal 3D nano-islands, RF-magnetron sputtering.
Citation
N. C. ZOITA, C. BESLEAGA, L. BRAIC, M.VLAICU, Pyramidal morphology of InN thin films deposited by reactive RF-magnetron sputtering, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.796-797 (2008).
Submitted at: Sept. 30, 2008
Accepted at: Dec. 4, 2008