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Properties of the ZnO/PS nanocomposites obtained by sol-gel method

HONG CAI1,* , HONGLIE SHEN1, LINFENG LU1, HAIBIN HUANG1, ZHENGXIA TANG1, YUGANG YIN1, JIANCANG SHEN2

Affiliation

  1. College of Materials Science & Engineering, Nanjing University of Aeronautics and Astronautics, 210016， Nanjing China
  2. National Laboratory of Solid State Microstructure & Department of Physics, Nanjing University, 210093, Nanjing China

Abstract

In the present work we investigated the ZnO/PS nanocomposite films. The porous silicon (PS) substrates were formed by electrochemical anodization from p-type (100) silicon wafer, and the starting material for ZnO was Zinc acetate. The ZnO thin films were deposited on the PS substrate with different porosities by sol-gel spin coating technique. XRD analysis revealed that highly (002) oriented ZnO thin films were formed. The photoluminescence (PL) measurements on the ZnO/PS nanocomposite films showed three intense broadband photoluminescence emissions at around ~ 380 nm, ~ 510 nm, and ~750 nm. The effects of the PS substrate on the PL properties were also studied in detail.

Keywords

ZnO films, Porous silicon, Sol-gel, C-axis orientation, Luminescence.

Citation

HONG CAI, HONGLIE SHEN, LINFENG LU, HAIBIN HUANG, ZHENGXIA TANG, YUGANG YIN, JIANCANG SHEN, Properties of the ZnO/PS nanocomposites obtained by sol-gel method, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.650-653 (2010).

Submitted at: March 1, 2010

Accepted at: May 20, 2010