Properties of pure and light antimony-doped tin oxide thin films prepared by e-beam technique
H. A. MOHAMED1,2,*
Affiliation
- Physics department, faculty of Science, Sohag University, 82524 Sohag, Egypt
- Physics department, Teachers College , King Saud University, 11148 Riyadh, KSA
Abstract
Transparent conducting antimony-doped tin oxide SnO2:Sb films were prepared on glass substrates by e-beam evaporation
technique. The effect of Sb-content and annealing temperature on the optical, electrical and structural properties of the
formed films were investigated. The as-deposited films show amorphous structure and low transmittance that increased
with increasing Sb-content. Upon annealing, the film ordering increases. The annealed (SnO2)100–xSbx (x= 3 wt%) films
show minimum resistivity of ~ 6 × 10-3 Ω cm at temperature 400 oC and their transmittance exceedes 84 % in the visible
region. The other parameters such as free carrier concentrations, refractive index, Urbach energy were calculated for asdeposited
and annealed films.
Keywords
SnO2:Sb films, Optoelectronic measurements, Urban energy.
Citation
H. A. MOHAMED, Properties of pure and light antimony-doped tin oxide thin films prepared by e-beam technique, Optoelectronics and Advanced Materials - Rapid Communications, 3, 9, September 2009, pp.936-941 (2009).
Submitted at: June 18, 2009
Accepted at: Sept. 15, 2009