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Process parameters variation effect on OFET based low power hydrogen sensor design

YOGESH THAKUR1, MAMTA KHOSLA1, BALWANT RAJ2, SHASHI BALA3, BALWINDER RAJ1,*

Affiliation

  1. Nanoelectronics Research Lab, Department of Electronics and Communication Engineering NIT Jalandhar, India
  2. UIET, Panjab University SSG Regional Centre Hoshiarpur-146001, India
  3. Chandigarh Engineering College- CGC Landaran, Mohali, India

Abstract

This study takes a unique approach by investigating the influence of various parameters on charge transport processes in Organic Field Effect Transistor (OFET) models. These parameters include field-effect mobility, disorder, trap existence, threshold voltage, and current ON/OFF ratio. The study utilizes two-dimensional finite element-based device models to explore top-contact OFETs with uniform and unequal mobility zones. Several calibrated simulation standards are developed to replicate the morphological disorder in structure, such as considering variable low mobility zones surrounding contacts. The study also examines the effects of varying the channel length from 10 µm to 50 µm on OFF current, ON current, threshold voltage, and current ON/OFF ratio. Notably, the device's Subthreshold slope remains constant for changes in channel length at 68.87 meV/dec. The current ratio decreases with the increase in work function. The sensitivity of both OFF and ON current increases with a change in work function, reaching a maximum value of 705.09 & 0.080 for a 200 meV change at 50 µm channel length.

Keywords

OFET, Hydrogen sensor, TCAD simulations, Sub-threshold slope and sensitivity.

Citation

YOGESH THAKUR, MAMTA KHOSLA, BALWANT RAJ, SHASHI BALA, BALWINDER RAJ, Process parameters variation effect on OFET based low power hydrogen sensor design, Optoelectronics and Advanced Materials - Rapid Communications, 18, 11-12, November-December 2024, pp.555-561 (2024).

Submitted at: June 20, 2024

Accepted at: Dec. 2, 2024