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H. YANG1,* , Q. TAO1
Sn, Ce doped and Sn/Ce co-doped TiO2 thin films (ST, CT and SCT, respectively) deposited on indium-doped tin oxide (ITO) glass were prepared using sol-gel dip coating technique and were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and ultraviolet-visible (UV-vis) absorption. The XRD results of the powder samples only showed peaks corresponding to anatase TiO2 but no crystalline phases of compounds formed by doping ions. XPS studies demonstrated that Sn exists in the form of Sn4+, while Ce exists in the two forms of Ce3+ and Ce4+. The UV-vis spectra revealed that the absorption edges of the doped TiO2 films exhibits red shift compared with the pure TiO2 film and the red shifting is the most evident for CT, indicating that doping of Sn and Ce causes the narrowing of the band gap.
TiO2 thin film, Doping, Optical property, X-ray photoelectron spectroscopy.
H. YANG, Q. TAO, Preparation and characterization of doped titanium dioxide thin films, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.806-810 (2008).
Submitted at: Nov. 2, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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