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V. P. SONDANKAR1, G. N. CHAUDHARI1,*
Hexagonal aluminium nitride thin films have been prepared on Si(100) by suspension coating pyrolytic method using a new single organo metallic precursor - dichlorophenyl amido aluminium (DCPAA) at temperatures 650 0C and 950 0C. XRD studies have shown decrease of peak intensities of hexagonal aluminium nitride at 2θ = 38.3 0 diffracted from (0002) crystal plane, at 2θ = 44.5 0 diffracted from (1011) crystal plane and a comparative decrease at 2θ=68.2 0 diffracted from (1120) crystal plane with increase of temperature. SEM studies have shown a smooth crystalline nature of AlN at 6500 C but nonuniform crystalline nature at 9500 C.
AlN, Thin films, Si(100) substrate, SEM, XRD.
V. P. SONDANKAR, G. N. CHAUDHARI, Preparation and characterization of AlN thin films deposited on Si(100) using single source precursor, Optoelectronics and Advanced Materials - Rapid Communications, 1, 10, October 2007, pp.520-522 (2007).
Submitted at: Aug. 6, 2007
Accepted at: Aug. 30, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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