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Post annealing effect on SnO2 thin films grown by thermal evaporation technique

A. SHARMA1,* , D. PRAKAH2, K. D. VERMA1

Affiliation

  1. Material Science Laboratory, Department of Physics, S.V.College, Aligarh (U.P.) India
  2. Department of Computer Science & Engineering, C-DAC, Noida, U.P., India

Abstract

Nanocrystalline tin oxide thin films were prepared by thermal evaporation technique. The grain sizes, crystallization process and morphology were investigated by x-ray diffraction (XRD) and Atomic Force Microscopy (AFM). Both optical band gap and transmittance were enhanced after heat treatment. All IR modes measured by Fourier Transform Infrared Microscopy (FTIR) spectrometer were assigned. The FTIR spectra show an increase in the intensity of the Eu mode (606.75 cm-1) after post annealing, which indicates fine crystallization of SnO2 grains. Thermal treatment induced defects enhance the diffusion of atoms leading to uniformity in size of grains. But the grains were found to be elongated and larger in size, in case of SnO2 films on quartz substrate deposited. The role of substrate on thermal treatment induced grain growth process is discussed.

Keywords

Nanocrystalline, Thin films, Grain growth process, Diffusion, AFM, XRD, FTIR.

Citation

A. SHARMA, D. PRAKAH, K. D. VERMA, Post annealing effect on SnO2 thin films grown by thermal evaporation technique, Optoelectronics and Advanced Materials - Rapid Communications, 1, 12, December 2007, pp.683-688 (2007).

Submitted at: Nov. 22, 2007

Accepted at: Nov. 27, 2007