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Plasmon – ionized impurity – phonon interaction in PbTe doped with Ni

J. TRAJIĆ1,* , N. ROMČEVIĆ1, M. ROMČEVIĆ1, Z. LAZAREVIĆ1, T. A. KUZNETSOVA2, D. R. KHOKHLOV2

Affiliation

  1. Institute of Physics, P.O. Box 68, University of Belgrade, 11080 Belgrade, Serbia
  2. Department of Physics, Moscow State University, 119899 Moscow, Russia

Abstract

Vibrational properties of PbTe single crystals doped with Ni are determined using far – infrared spectroscopy in wide temperature range. Far – infrared reflection spectra were analyzed using a fitting procedure based on the modified plasmon – ionised impurity – phonon interaction model. Together with the strong coupling we obtained three local modes of Ni at about 130, 165 and 190 cm–1, which correspond to the impurity atoms in different valence states. The positions of these modes depend on the impurity center charge, while their intensities depend on the temperature and Ni concentration..

Keywords

Semiconductors, Crystal growth, Phonons, Plasmon – phonon interaction.

Citation

J. TRAJIĆ, N. ROMČEVIĆ, M. ROMČEVIĆ, Z. LAZAREVIĆ, T. A. KUZNETSOVA, D. R. KHOKHLOV, Plasmon – ionized impurity – phonon interaction in PbTe doped with Ni, Optoelectronics and Advanced Materials - Rapid Communications, 7, 7-8, July-August 2013, pp.536-540 (2013).

Submitted at: March 22, 2013

Accepted at: July 11, 2013