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S. KALEEMULLA1,* , A. SIVASANKAR REDDY2, S. UTHANNA3, P. SREEDHARA REDDY3
Transparent conductive pure indium oxide (In2O3) thin films have been deposited on glass substrates by an activated reactive evaporation method and studied the effect of substrate temperature on the structural, electrical, optical and photoluminescence properties of the deposited films. The films were crystallized in cubic structure having an average optical transmittance of 80 % in visible region with low electrical resistivity of 9.7x10-4 Ωcm exhibiting an intensive photoluminescence emission peaks at 415 nm and 440 nm.
Indium oxide, Activated reactive evaporation, Transparent conducting oxide.
S. KALEEMULLA, A. SIVASANKAR REDDY, S. UTHANNA, P. SREEDHARA REDDY, Physical properties of pure In2O3 thin films, Optoelectronics and Advanced Materials - Rapid Communications, 2, 12, December 2008, pp.782-787 (2008).
Submitted at: Nov. 1, 2008
Accepted at: Dec. 4, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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