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Photonic bandgap analysis in 1D porous silicon photonic crystals using transfer matrix method

R. S. DUBEY1,* , D. K. GAUTAM1

Affiliation

  1. Department of Electronics, North Maharashtra University, Post Box 80, Umavinagar, Jalgaon (M.S.), India

Abstract

There has been much interest in the physics and applications of one-dimensional spatially periodic, quasi-periodic and random photonic bandgap (PBG) structures. In this paper, we had employed an accurate and efficient transfer matrix method (TMM) to analyze the photonic bandgap variation in one-dimensional porous silicon photonic crystals (1DPSPCs). The optical properties dependence on imperative parameters angle of incidence, lattice constant and refractive index contrast have been analyzed. The forbidden bandwidth and the reflectance results show great agreement to each other, which verifies the accuracy obtained by us, using TMM for the computations. The increment in the angle of incidence and lattice constant shifts the photonic bandgaps towards the higher frequency range. The shift in forbidden bandgap and reflectance with the decrease of the lattice constant is clearly depicted in Fig. 5 and Fig. 6. The investigation of 1D photonic crystal for these parameters shows that the bandwidth varies from 0.11 to 0.32 as revealed in Fig. 4.

Keywords

Bloch waves, 1D photonic crystals, Porous silicon layers, TE polarization.

Citation

R. S. DUBEY, D. K. GAUTAM, Photonic bandgap analysis in 1D porous silicon photonic crystals using transfer matrix method, Optoelectronics and Advanced Materials - Rapid Communications, 1, 9, September 2007, pp.436-441 (2007).

Submitted at: Aug. 9, 2007

Accepted at: Aug. 15, 2007