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Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD

CHAOPU YANG1,2, WENQING FANG2,* , QINGHUA MAO2, XIAOMING WU2, CHUNSHENG ZHOU1

Affiliation

  1. Shaanxi Key Laboratory of Comprehensive Utilization of Tailings Resources, Shangluo University, Shangluo, 726000, China
  2. National Engineering Technology Research Center for LED on Silicon Substrate, Nanchang University, Nanchang, 330047, China

Abstract

In this work, an independent design photoluminescence (PL) measurement tool was used to monitor the PL spectra evolution during epitaxial growth of blue-green quantum well structures on silicon substrate by metal organic chemical vapor deposition (MOCVD). A split optical fiber and a notch OD 6 filter were employed to minimize the incoming laser beam (405nm) influence on the spectra. Using this method, the PL characterization of the layer between steps of the growth at several points were obtained by decreasing the reactor temperature. The effects of the temperature, the number of quantum wells and the p-type GaN layer on the photoluminescence are reported. We found that the presence of the p-type GaN layer significantly decreased the intensity of multiple quantum wells PL..

Keywords

Photoluminescence, Metal organic chemical vapor deposition, LED, GaN.

Citation

CHAOPU YANG, WENQING FANG, QINGHUA MAO, XIAOMING WU, CHUNSHENG ZHOU, Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD, Optoelectronics and Advanced Materials - Rapid Communications, 9, 11-12, November-December 2015, pp.1575-1578 (2015).

Submitted at: June 2, 2015

Accepted at: Oct. 28, 2015