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HONGCHANG CHENG1,2,3,* , QINGDUO DUANMU1, FENG SHI2,3, LEI YAN2, LIU FENG2, HUI LIU2
In order to match the laser working at 1.06 μm, a GaAlAs/InGaAs photocathode material was grown by molecular beam epitaxial and was fabricated in the form of transmission-mode GaAlAs/InGaAs photocathode module. It is shown that the integral sensitivity is 575 μA·lm-1 and the radiant sensitivity at 1.06 μm is 0.043 mA·W-1 for the GaAlAs/InGaAs photocathode module. Comparing with the optical properties of the GaAs photocathode module and the photoemission performance curves of the other InGaAs photocathode respectively, it is indicated that the GaAlAs/InGaAs photocathode module prepared in this paper can respond shifting to the infrared waveband, the radiant sensitivity at 1.06 μm is higher than that of Russia’s photocathode, and the integral sensitivity is higher than that of US Andor’s photocathode. The results show that the parameters of the GaAlAs window layer and the InGaAs active layer should be improved to design in order to decrease the shortwave response and further increase the longwave response..
InGaAs photocathode, Optical properties, Spectral response, Integral sensitivity, Radiant sensitivity.
HONGCHANG CHENG, QINGDUO DUANMU, FENG SHI, LEI YAN, LIU FENG, HUI LIU, Photoemission performance of transmission-mode GaAlAs/InGaAs photocathode, Optoelectronics and Advanced Materials - Rapid Communications, 6, 9-10, September-October 2012, pp.788-792 (2012).
Submitted at: April 26, 2012
Accepted at: Sept. 20, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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