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Photoconductivity study as a function of thickness and composition of Zn-Te thin films for different illumination conditions at room temperature

U. P. SHINDE1,* , A. V. PATIL1, C. G. DIGHAVKAR1, S. J. PATIL2, K. H. KAPADNIS3, R. Y. BORSE2, P. S. NIKAM4

Affiliation

  1. Dept.of Physics and Electronics, L.V.H.College, Panchavati, Nasik-422003 Dist-Nasik, (M.S.), India
  2. Dept.of Physics and Electronics, M.S.G.College, Malegaon Camp-423105Dist-Nasik, (M.S.), India
  3. Dept. Of Chemistry, L.V.H.College, Panchavati, Nasik-422003 Dist-Nasik (M.S.), India
  4. Dept. Of Chemistry, M.S.G.College, Malegaon Camp-423105Dist-Nasik (M.S.), India

Abstract

Thin films of Zn-Te compound of varying compositions and thicknesses have been formed on glass substrates employing three temperature method. The photoconductivity study was made at dark and illuminated conditions. The spectral response of photocurrent as a function of certain wavelength of incident radiations, maximum photocurrent is developed at about 520 nm irrespective of composition and thickness. For the same composition of Zn and Te, photocurrent is function of applied bias voltage and the incident light intensity. The maximum photocurrent was developed at about thickness of 500 nm irrespective of composition and also stoichiometric ZnTe films irrespective of thickness at room temperature..

Keywords

Thin film, Photoconductivity, Spectral response, Light intensity, Thickness, Composition.

Citation

U. P. SHINDE, A. V. PATIL, C. G. DIGHAVKAR, S. J. PATIL, K. H. KAPADNIS, R. Y. BORSE, P. S. NIKAM, Photoconductivity study as a function of thickness and composition of Zn-Te thin films for different illumination conditions at room temperature, Optoelectronics and Advanced Materials - Rapid Communications, 4, 3, March 2010, pp.291-294 (2010).

Submitted at: Jan. 28, 2010

Accepted at: March 12, 2010