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A. S. MAAN1,* , D. R. GOYAL1
Photoconductivity measurements have been made as a function of temperature and intensity on thin films of SbxSe100−x (x = 5, 10, 15 and 20) glassy alloys using a Helium Neon Laser. Temperature dependence of steady state photocurrent shows that the photoconductivity is an activated process. The activation energy of photoconduction (ΔEph) decreases with increasing antimony content. Intensity dependence of photocurrent confirms the power law dependence of photocurrent on incident radiation. Intensity exponent close to 0.5 indicates bimolecular recombination in all the alloys. Transient photoconductivity measurements have been made as a function of temperature and intensity. The decay of photocurrent comprises of two components, a faster part at the onset followed by a slower decay. Both parts of decay are found to be exponential with two distinct recombination time constants indicative of distinct processes taking part in the recombination process.
Chalcogenide glasses, Thin films, Photoconductivity, Recombination kinetics.
A. S. MAAN, D. R. GOYAL, Photoconductivity in thin films of SbxSe100−x glasses, Optoelectronics and Advanced Materials - Rapid Communications, 1, 9, September 2007, pp.430-435 (2007).
Submitted at: Aug. 7, 2007
Accepted at: Aug. 15, 2007
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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