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A. HAMDOUNE1,* , Z. ALLAM1, C. BOUDAOUD1
In this paper, an InGaN/GaN/AlGaN visible and ultraviolet (UV) photodetector was studied. Modeling and characteristics were performed using the semiconductor device simulation software SILVACO-TCAD. Energy diagram, internal potential, electric field, and conduction current density were first performed, and then external characteristics simulated. The device exhibited a current of about 1.5 mA for -10 V applied bias; this is in good agreement with the experimental value of current. Under -0.2 V bias; the photocurrent had a value of 22.5 μA for a wavelength ranging from 100 nm to 650 nm..
Gallium nitride (GaN), Aluminum gallium nitride AlGaN, Indium gallium nitride InGaN, Visible spectrum, Ultraviolet spectrum, Photodetector.
A. HAMDOUNE, Z. ALLAM, C. BOUDAOUD, Performance of an InGaN/GaN/AlGaN MSM photodetector, Optoelectronics and Advanced Materials - Rapid Communications, 8, 1-2, January-February 2014, pp.33-36 (2014).
Submitted at: April 25, 2013
Accepted at: Jan. 22, 2014
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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