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SANJEEV1, P. CHAKRABARTI2,*
In this paper, we present an analytical approach to evaluate the effect of high carrier injection on the performance of a midinfrared (MIR) single heterojunction light emitting diode (SH-LED) based on P+ -InAs0.36Sb0.20P0.44/ n0 -InAs/n+ -InAs material system for operation in 2.4–3.5 µm spectral range at room temperature. The model developed for the purpose takes into account all dominating radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the SH-LED structure. The effect of these processes on the quantum efficiency, modulation bandwidth and output power of the SH-LED under high carrier injection have been considered in this model. The output power of the SH-LED has been computed as a function of bias current and it is found to be in good agreement with reported experimental results.
Gas sensor, Optical fiber communication, Light emitting diode, Mid-infrared, Single heterostructure.
SANJEEV, P. CHAKRABARTI, Performance of a mid-infrared (MIR) SH-LED under high carrier injection, Optoelectronics and Advanced Materials - Rapid Communications, 2, 8, August 2008, pp.459-465 (2008).
Submitted at: June 20, 2008
Accepted at: July 16, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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