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Perfect THz absorber based on vanadium dioxide

RISHABH AGARWAL1, SURENDRA KUMAR GUPTA1, AMIT BAGE1,*

Affiliation

  1. Department of Electronics and Communication Engineering, National Institute of Technology, Hamirpur, Himachal Pradesh, 177005, India

Abstract

This work proposes a novel metamaterial perfect absorber (MPA) for the terahertz (THz) frequency range. The MPA utilizes a split-ring star-shaped pattern fabricated from vanadium dioxide (VO2) on a silicon dioxide (SiO2) dielectric substrate. The CST Microwave Studio is used for structure's absorption performance. The design employs a sub-wavelength unit cell to create a near-infinite periodic array. Numerical analysis of unit cell's shows absorption of 99.79% at a specific frequency of 4.108 THz. Furthermore, the MPA demonstrates a broad terahertz absorption bandwidth exceeding 90% ranging from 3.541 THz to 4.773 THz, which translates to a bandwidth of 1.232 THz.

Keywords

Absorber, Metamaterials, Perfect absorption, Silicon dioxide, THz, Vanadium dioxide.

Citation

RISHABH AGARWAL, SURENDRA KUMAR GUPTA, AMIT BAGE, Perfect THz absorber based on vanadium dioxide, Optoelectronics and Advanced Materials - Rapid Communications, 18, 11-12, November-December 2024, pp.525-531 (2024).

Submitted at: July 18, 2024

Accepted at: Dec. 2, 2024