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MUMTA HENA MUSTARY1, VOLODYMYR V. LYSAK1,*
Band parameters of group III-V compound semiconductors GaAs, InAs and InP are fitted. Because of the random distribution of elements from the same group within the alloy lattice, exact calculations of material parameters are hardly possible. That is why we tried to fit parameters using as many experimental data as possible. Emphasizing the importance of band structure calculation, direct energy band gap, Passlerr parameters, Luttinger parameters, deformation potentials, energy parameter and correction parameter are fitted, which are the most controversial in literature..
Multiple-quantum-wells, Parameter extraction, Rate equation model, Small-signal modulation characteristics, VCSEL.
MUMTA HENA MUSTARY, VOLODYMYR V. LYSAK, Parameter extraction method of band parameters for III-V compound semiconductors using experimental data of transition energies, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.971-975 (2012).
Submitted at: May 23, 2012
Accepted at: Oct. 30, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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