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p+-Si/i-Si/n-SiC heterostructure photodiode used in visible region

LI LIANBI1,2, CHEN ZHIMING1,* , ZANG YUAN1, LIU WENTAO1, HU JICHAO1

Affiliation

  1. Department of Electronic Engineering, Xi’an University of technology, Xi’an 710048, China
  2. School of Science, Xi’an polytechnic University, Xi’an, 710048 China

Abstract

In order to realize non-UV light operation, a Si film grown on SiC is used as a non-UV light-absorption layer, so as to develop the SiC-based photoelectronic devices applied in high temperature and high power regions. Energy-band structure and photoelectric properties of the p+-Si/i-Si/n-SiC heterostructure are simulated by Silvaco-TCAD. And the p-i-n photodiode used in visible region was fabricated on 6H-SiC substrate successfully. Compared with the p-Si/n+-SiC photodiode, the p+-Si/i-Si/n-SiC photodiode exhibits better photoelectric performance, the photocurrent and the open-circuit voltage increase to 24.4mA/cm2 and 156mV respectively under visible illumination of 0.6W/cm2, especially the photocurrent increases by two orders of magnitude..

Keywords

Silicon carbide, Silicon, Heterojunction photodiode.

Citation

LI LIANBI, CHEN ZHIMING, ZANG YUAN, LIU WENTAO, HU JICHAO, p+-Si/i-Si/n-SiC heterostructure photodiode used in visible region, Optoelectronics and Advanced Materials - Rapid Communications, 8, 5-6, May-June 2014, pp.387-389 (2014).

Submitted at: April 22, 2013

Accepted at: May 15, 2014