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Orientation and Raman study of Bi3.2Nd0.8Ti3O12 ferroelectric films prepared in condition of different annealing schedules

H. Y. HE1,* , Z. HE1, L. Y. CAO1, J. P. WU1

Affiliation

  1. College of Materials Science and Technology, Shaanxi University of Science and Technology, China(712081)

Abstract

Fatigue-free Bi3.2Nd0.8Ti3O12 ferroelectric thin films were successfully prepared on p-Si(100) substrate using metalorganic precursor deposition process. The orientation and formation of five-layer thin film under different annealing schedules were studied. XRD analysis indicated that (200)-oriented films with degree of orientation of I(200)/I(117)=0.574 and 0.633 were obtained by preannealing at 400 ℃for 10 min followed by rapid thermal annealing at 700 ℃for 3 min and 10 min, respectively, (008)-oriented film with degree of orientation of I(008)/I(117)=0.605 and 1.671 were obtained by rapid thermal annealing at 700 ℃ and 800 ℃for 3 min without preannealing. AFM was used to further analysis the morphologies of the films. The mechanisms in the formation and the variation of the single a- and c-oriented textures are discussed. Raman analysis revealed that the polarization vector should be at a-axis direction of the film.

Keywords

Bi3.2Nd0.8Ti3O12, Ferroelectric film, Annealing schedule, Orientation.

Citation

H. Y. HE, Z. HE, L. Y. CAO, J. P. WU, Orientation and Raman study of Bi3.2Nd0.8Ti3O12 ferroelectric films prepared in condition of different annealing schedules, Optoelectronics and Advanced Materials - Rapid Communications, 3, 11, November 2009, pp.1243-1246 (2009).

Submitted at: Oct. 17, 2009

Accepted at: Oct. 29, 2009