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Optoelectronic properties of hydrogenated nanocrystalline silicon thin films

RONG ZHANG1,* , XINYI CHEN2, WENZHONG SHEN2

Affiliation

  1. Department of P hysics, Shanghai Maritime University, 1550 Haigang Ave , Shanghai 20 1306 , P. R. China
  2. Laboratory of Condensed Matter Spectroscopy and Opto Electronic Physics, Department of Physics and Astronomy , Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200 240 , P. R. China

Abstract

The refractive inde x had been studied on a serials of nc Si:H thin films through infrared transmission reflection spectra, which demonstrated that the refractive index of nc Si:H thin film is adjustable by varying growth condition The photocurrent had been also studied on these nc Si:H thin films with different refractive index. These investigation results revealed the possible application on optical waveguide and photon electron conversion by the nc Si:H thin films..

Keywords

H ydrogenated nanocrystalline silicon thin film , I nfrared reflection , T ransmission P hotocurrent.

Citation

RONG ZHANG, XINYI CHEN, WENZHONG SHEN, Optoelectronic properties of hydrogenated nanocrystalline silicon thin films, Optoelectronics and Advanced Materials - Rapid Communications, 12, 9-10, September-October 2018, pp.559-562 (2018).

Submitted at: Feb. 6, 2018

Accepted at: Oct. 10, 2018