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Optoelectrical properties ZnO and W-doped In2O3 multilayer films grown by pulsed laser deposition

R. K. GUPTA1,* , K. GHOSH1, R. PATEL2, P. K. KAHOL1

Affiliation

  1. Department of Physics, Astronomy, and Materials Science, Missouri State University, Springfield, Missouri-65897, USA
  2. Roy Blunt Jordan Valley Innovation Center, Missouri State University, Springfield, Missouri-65806, USA

Abstract

Transparent and conducting thin films having structure of zinc oxide/tungsten doped indium oxide/zinc oxide (ZnO/IWO/ZnO) were deposited by pulsed laser technique. The effect of ZnO films thickness on structural, optical and electrical properties of multilayer films is studied. These films are highly oriented along (002) and (222) direction for ZnO and IWO respectively. The transparency of films is over 75 %. The conductivity, carrier concentration and mobility of films increase with increase in IWO film thickness. The low resistivity (1.24 × 10-4 Ω.cm), high mobility (198 cm2V-1s-1) and high transmittance (> 80 %) suggest that these multilayer films could be used as highly conducting and transparent electrodes for optoelectronic applications.

Keywords

Laser deposition, Multilayer thin films, Electrical conductivity, Optical materials, Oxides.

Citation

R. K. GUPTA, K. GHOSH, R. PATEL, P. K. KAHOL, Optoelectrical properties ZnO and W-doped In2O3 multilayer films grown by pulsed laser deposition, Optoelectronics and Advanced Materials - Rapid Communications, 3, 12, December 2009, pp.1295-1298 (2009).

Submitted at: Sept. 29, 2009

Accepted at: Nov. 23, 2009