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J. P. KAR1,* , G. BOSE1, S. TULI1, S. MUKHEJEE2, J. M. MYOUNG3
AlN films were grown on silicon by DC reactive magnetron sputtering and Al/AlN/Si structures were fabricated to study the influence of post metalization annealing (PMA) and UV light. Thereafter, the samples were annealed at 350 ºC for 30 minutes in presence of argon gas. Reduction of hysteresis as well as interface state density was observed as a result of PMA. On the other hand, a ledge appeared in C-V curves, which became prominent with light intensity. The leakage current increased significantly as a result of photo generated charge carriers..
AlN, Sputtering, UV, Electrical measurements.
J. P. KAR, G. BOSE, S. TULI, S. MUKHEJEE, J. M. MYOUNG, Opto-electrical properties of sputtered AlN films, Optoelectronics and Advanced Materials - Rapid Communications, 3, 6, June 2009, pp.631-633 (2009).
Submitted at: June 6, 2009
Accepted at: June 15, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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