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Optimization of annealing conditions in air for InGaZnO thin film transistors by temperature stress studies

CUNPING QIN1, JUN YANG2, BOWEN WANG3, TAO XU4, XINGWEI DING4,1,*

Affiliation

  1. School of Mechatronics and Automation, Shanghai University, Shanghai 200072, China
  2. Department of Materials Science, Shanghai University, Shanghai 200072, China
  3. Air Liquide Shanghai Research & Technology Center, Shanghai 201108, China
  4. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China

Abstract

Amorphous InGaZnO (a IGZO) thin film transistors (TFTs) with different annealing temperatures (200 3 5 0 °C ) were fabricated intentionally by radio frequency magnetron sputtering. The instability of a IGZO TFTs was described by density of states (DOS) based on the experimentally obtained activation energy ( E A ) in temperature stress studies and it was used to optimize the annealing conditions for a IGZO TFTs. It was of in terest to note that under annealing at 300 °C in air, the performance and stability of a IGZO TFTs was improved significantly by increasing the annealing time to 110 min . The a IGZO TFT annealed at 300 °C for 110 min with a field effect mobility of 5.78 cm 2 /Vs, a threshold voltage of 3.51 V, a higher on/off current ratio of 3 × 1 0 6 and a smaller subthreshold swing of 0.15 V/decade is very promising for driving devices in flat panel displays..

Keywords

InGaZnO TFTs, Temperature stress studies, Density of states.

Citation

CUNPING QIN, JUN YANG, BOWEN WANG, TAO XU, XINGWEI DING, Optimization of annealing conditions in air for InGaZnO thin film transistors by temperature stress studies, Optoelectronics and Advanced Materials - Rapid Communications, 12, 7-8, July-August 2018, pp.407-412 (2018).

Submitted at: Dec. 1, 2017

Accepted at: Aug. 9, 2018