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Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors

S. B. LISESIVDIN1,* , A. YILDIZ2, M. KASAP1

Affiliation

  1. Gazi University, Faculty of Science and Arts, Physics Department, Teknikokullar, Ankara, Turkey
  2. Ahi Evran University, Faculty of Science and Arts, Physics Department, Kirsehir, Turkey

Abstract

The investigating of the GaN-based high electron mobility transistors (HEMTs) is focused to achieve two goals: increase of carrier density and mobility. Increasing the number of the carriers in the 2-dimensional-electron-gas (2DEG) and localize the carriers in the 2DEG properly are required to achieve high performance. Inserting a thin undoped AlN interlayer between undoped AlxGa1-xN barrier and undoped GaN channel layer is one of the methods to achieve high performance AlxGa1- xN/GaN HEMT structures. In this work, self-consistent 1-band 1-dimension Schrödinger-Poisson equations are solved for pseudomorphically grown undoped AlxGa1-xN/GaN HEMT structures with and without AlN interlayer. The effects of AlN interlayer and AlxGa1-xN barrier layer thicknesses and different Al-mole fractions in AlxGa1-xN barrier layer on band structures, carrier densities and 2DEG wave functions are investigated.

Keywords

AlGaN/GaN, HEMT, Schrödinger equation, Poisson equation, 2DEG, AlN interlayer, AlGaN barrier.

Citation

S. B. LISESIVDIN, A. YILDIZ, M. KASAP, Optimization of alloy composition, interlayer and barrier thicknesses in AlxGa1-xN/(AlN)/GaN high electron mobility transistors, Optoelectronics and Advanced Materials - Rapid Communications, 1, 9, September 2007, pp.467-470 (2007).

Submitted at: Aug. 6, 2007

Accepted at: Aug. 15, 2007