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KUN ZHONG1,* , MIN LAI1, HONGYAN WU1
Si 1 x Ge x O 2 thin films were prepared by radio frequency (RF) magnetron sputtering and annealing treatment method. Ge/GeO2 core-shell nanoparticals (NPs) embedded in SiO 2 matrix were identified by high resolution transmission electron micros cope (HRTEM), with a size of ~4 nm in diameter. The affect of annealing temperature on the microstructural and photoluminescence (PL) properties of the thin films were investigated. Specimen exhibited red and near infrared light emission at room temperatur e. The position of 780 nm PL peak was independent with annealing temperature, which was ascribed to the electron transition in Ge O related defects. As for ~900 nm light emission, quantum confinement effect was considered as a possible transition mechanism..
P hotoluminescence, Si 1 x Ge x O 2 thin films, Quantum confinement effect.
KUN ZHONG, MIN LAI, HONGYAN WU, Optical properties of Si 1 x Ge x O 2 thin films prepared by radio frequency magnetron sputtering method, Optoelectronics and Advanced Materials - Rapid Communications, 10, 1-2, January-February 2016, pp.37-39 (2016).
Submitted at: July 16, 2013
Accepted at: Feb. 10, 2016
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
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