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Optical gain characteristics of GaAs based type-II AlAsSb/InGaAs/GaAsSb nanoscale heterostructure for near infrared applications

JAYPRAKASH VIJAY1,2, A. K. SINGH1, P. K. JAIN2, P. A. ALVI3, KULWANT SINGH1, AMIT RATHI1,*

Affiliation

  1. Department of Electronics and Communication Engineering, Manipal University Jaipur, 303007, Rajasthan, India
  2. Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan, India
  3. Department of Physics, Banasthali Vidyapith, Vanasthali, 304022, Rajasthan, India

Abstract

In this work, a nanoscale-heterostructure with composition layers AlAsSb/InGaAs/GaAsSb is designed on a GaAs substrate. The associated wavefunctions, dispersion profile, behavior of dipole transition matrix elements and optical gain have been evaluated. The heterostructure is modeled using 6 band method by solving the 6 × 6 Luttinger-Kohn Hamiltonian. At room temperature, the optical gain of around 6500 cm-1 is obtained at the 1460 nm wavelength for injected carrier concentration of 5 x 1012/cm2 . The effects of the externally applied strain and temperature are also investigated for the possible tuning of optical gain and wavelength in the NIR range.

Keywords

Optical gain, Heterostructure, Quantum well, Near-infrared, method.

Citation

JAYPRAKASH VIJAY, A. K. SINGH, P. K. JAIN, P. A. ALVI, KULWANT SINGH, AMIT RATHI, Optical gain characteristics of GaAs based type-II AlAsSb/InGaAs/GaAsSb nanoscale heterostructure for near infrared applications, Optoelectronics and Advanced Materials - Rapid Communications, 15, 3-4, March-April 2021, pp.114-119 (2021).

Submitted at: Sept. 9, 2020

Accepted at: April 7, 2021