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Optical confinement in GaN based quantum dot embedded heterostructure

UJWALA ZOPE1, E. P. SAMUEL1, D. S. PATIL1,*

Affiliation

  1. Department of Electronics, North Maharashtra University, Jalgaon [Maharashtra], India

Abstract

Analysis of optical confinement in quantum dot embedded heterostructure has been carried out for the optimization of smaller active region volume to achieve desired modal gain. Overall optical confinement has been deduced by taking product of lateral, transverse and longitudinal optical confinements. Near field intensity distribution has been obtained to have clear insight of 3D fundamental electric mode confinement at 375 nanometer wavelength. Far field intensity reveals divergence of 26 degrees. Overall confinement shows nonlinear variation with quantum dot size. The near field confinement within the quantum dot seems to be excellent. Investigation of near, far field and optical confinement has been carried out with change in Aluminum mole fraction and dot dimensions.

Keywords

Optical Confinement, GaN, Quantum dot.

Citation

UJWALA ZOPE, E. P. SAMUEL, D. S. PATIL, Optical confinement in GaN based quantum dot embedded heterostructure, Optoelectronics and Advanced Materials - Rapid Communications, 2, 1, January 2008, pp.4-9 (2008).

Submitted at: Dec. 20, 2007

Accepted at: Jan. 16, 2008