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M. M. ABD EL-RAHEEM1,2,* , H. M. ALI3,2, N. M. EL-HUSAINY1
Thin films of CdTe with different film thickness have been grown on glass substrates with different film thickness by electron beam evaporation technique. The influences of the thickness and annealing temperature on the structural, optical and electrical characteristics of CdTe films have been investigated. The structure of the deposited CdTe films was of the zincblend type with a preferential orientation of (111) planes. The optical transmittance of these films was determined using a double beam spectrophotometer. All the spectra reveal interference fringes in the wavelength region from 820 to 2500 nm. The refractive index, n was calculated from the transmission spectra using the Swanepoel’s method. The electrical resistivity measurements were carried out using the two-terminal configuration in air. High resistive CdTe films have been obtained after annealing at the temperature 400 oC.
Thin films, Structure properties, Transmittance, Refractive index, Electrical resistivity.
M. M. ABD EL-RAHEEM, H. M. ALI, N. M. EL-HUSAINY, Optical and electrical measurements on electron beam evaporated CdTe thin films, Optoelectronics and Advanced Materials - Rapid Communications, 3, 6, June 2009, pp.533-538 (2009).
Submitted at: June 2, 2009
Accepted at: June 15, 2009
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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