OAM-RC

Abstract

TDFA (Thulium doped optical amplifier) for S-band enables the use of S-band. In this paper, the effect of change in doping parameters on the gain of 10 mol% alumina co-doped TDFA is analyzed for 1050 nm, 1050 nm + 1400 nm, 1050 nm + 800 nm, 1050 nm +1400 nm + 800 nm pumping schemes. The system is analyzed for a doping concentration value of 20×1024 m -3 and 40×1024 m -3 , while the doping radius is varied from 0.3 µm to 1.3 µm. A significant effect of the doping parameters on the performance of TDFA is observed. Out of the considered parameters, the highest peak gain of 30.5 dB is observed for the 1050 nm + 1400 nm + 800 nm pumping of the TDFA, which has a doping concentration of 40×1024 m -3 and doping radius of 0.9 µm. The gain for above mentioned optimum parameters shows the gain enhancement of ~15 dB over the reference case of 1050 nm pumping of TDFA with a doping concentration of 20×1024 m -3 and a doping radius of 1.3 µm.

Keywords

S-Band, TDFA, Silica, Gain, Doping concentration, Doping radius.

Citation

RAJANDEEP SINGH, MANINDER LAL SINGH, On the effect of change in doping concentration and doping radius on the gain of 10% alumina co-doped hostbased TDFA, Optoelectronics and Advanced Materials - Rapid Communications, 15, 1-2, January-February 2021, pp.17-25 (2021).

Submitted at: July 2, 2020

Accepted at: Feb. 12, 2021