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Numerical simulation of P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+- InAs SH-LED for mid-infrared applications

SANJEEV1, P. CHAKRABARTI2,*

Affiliation

  1. Department of Electronics and Instrumentation Engineering, Institute of Engineering and Technology, MJP Rohilkhand University, Bareilly -243 006 India
  2. Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi -221 005 India

Abstract

In this paper, we present ATLAS simulation studies on P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+-InAs SH-LED for operation in 2.4–3.5 μm spectral range at room temperature. The device has been characterized in terms of energy band diagram, electric field profile, doping profile, current-voltage characteristics and output power using ATLAS software tool from Silvaco®. The outcomes of the numerical simulations are found to be in good agreement with the reported analytical and experimental results..

Keywords

ATLAS, LED, Mid-infrared, Numerical simulation, Heterostructure.

Citation

SANJEEV, P. CHAKRABARTI, Numerical simulation of P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+- InAs SH-LED for mid-infrared applications, Optoelectronics and Advanced Materials - Rapid Communications, 4, 3, March 2010, pp.280-283 (2010).

Submitted at: Sept. 28, 2009

Accepted at: March 12, 2010