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K. ALFARAMAWI1,*
Calculations of the electron mobility of n-type GaN have been carried out at different temperatures using the relaxation time approximation method. In this temperature range a number of possible scattering mechanisms was discussed. Neutral impurity, ionized impurity and acoustic phonon scattering types were considered. The mobility due to piezoelectric acoustic phonon scattering was assumed to be negligible at high temperatures.
Relaxation time, Mobility, Impurity scattering, Lattice scattering.
K. ALFARAMAWI, Numerical calculations of the electron mobility of n-GaN, Optoelectronics and Advanced Materials - Rapid Communications, 4, 7, July 2010, pp.922-924 (2010).
Submitted at: June 13, 2010
Accepted at: July 14, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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