Abstract
The noise analysis of a long-wavelength infrared (LWIR) photodetector based on InAs1-xSbx has been reported. The noise
equivalent power limited by thermal and shot noise current components has been estimated theoretically by considering a
simplistic model of the photodetector. All the dominant dark current components e.g., diffusion, generation-recombination
and tunneling (both band-to-band and trap-assisted) have been taken into consideration for computation of shot-noise. The
noise equivalent power (NEP) has been estimated to be 3.35×10-11 WHz1/2 for an equivalent load resistance of 1 MΩ for
operation at 77 K. The physics based model developed for photodetector characterization has been validated by reported
experimental results.
Keywords
InAsSb photodetector, Tunneling, Noise, free-space optical communication (FSO), noise equivalent power (NEP).
Citation
P. K. MAURYA, P. CHAKRABARTI, Noise analysis of an InAsSb single heterojunction photovoltaic detector for free-space optical communication (FOC) applications, Optoelectronics and Advanced Materials - Rapid Communications, 1, 11, November 2007, pp.591-600 (2007).
Submitted at: Sept. 25, 2007
Accepted at: Oct. 31, 2007