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Noise analysis of an InAsSb single heterojunction photovoltaic detector for free-space optical communication (FOC) applications

P. K. MAURYA1, P. CHAKRABARTI1,*

Affiliation

  1. Centre for Research in Microelectronics, Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi-221005, India

Abstract

The noise analysis of a long-wavelength infrared (LWIR) photodetector based on InAs1-xSbx has been reported. The noise equivalent power limited by thermal and shot noise current components has been estimated theoretically by considering a simplistic model of the photodetector. All the dominant dark current components e.g., diffusion, generation-recombination and tunneling (both band-to-band and trap-assisted) have been taken into consideration for computation of shot-noise. The noise equivalent power (NEP) has been estimated to be 3.35×10-11 WHz1/2 for an equivalent load resistance of 1 MΩ for operation at 77 K. The physics based model developed for photodetector characterization has been validated by reported experimental results.

Keywords

InAsSb photodetector, Tunneling, Noise, free-space optical communication (FSO), noise equivalent power (NEP).

Citation

P. K. MAURYA, P. CHAKRABARTI, Noise analysis of an InAsSb single heterojunction photovoltaic detector for free-space optical communication (FOC) applications, Optoelectronics and Advanced Materials - Rapid Communications, 1, 11, November 2007, pp.591-600 (2007).

Submitted at: Sept. 25, 2007

Accepted at: Oct. 31, 2007