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B. CHANDER JOSHI1,* , D. KUMAR2, C. DHANAVANTRI1
Performance of GaN based HEMTs and LEDs can be improved by using the high thermal conducting substrate materials. Still large amount of heat remain in these devices, which are sufficient to degrade the performance. By connecting metal pads to heat sink, we can improve the performance of AlGaN/GaN HEMTs and AlGaN/InGaN/GaN LEDs. For HEMTs, it is observed that the source metal can extract more heat from the device, than drain contact, and in short-channel devices gate metal becomes inefficient in extracting heat from the device..
HEMT, GaN, AlGaN, InGaN, Contact, Substrate.
B. CHANDER JOSHI, D. KUMAR, C. DHANAVANTRI, New techniques to extract heat from GaN based high electron mobility transistors and LEDs, Optoelectronics and Advanced Materials - Rapid Communications, 4, 5, May 2010, pp.637-643 (2010).
Submitted at: April 3, 2010
Accepted at: May 20, 2010
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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