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F. ŠROBÁR1,* , O. PROCHÁZKOVÁ1
Properties of the hydrogen detectors on the basis of Pd/InP oxides/InP MOS structures are investigated, in particular the dependence between hydrogen pressure in the ambience and the coverage of the M/O interface by adsorbed H atoms. Presence of a negative feedback loop in the causal portrait of the hydrogen pressure – versus – M/O interface coverage by hydrogen atoms is established in the case when enthalpy of hydrogen adsorption diminishes with coverage, as supposed by the Temkin theory. The analysis is helpful in extracting model parameter values from empirical data and promoting better understanding of the modus operandi of the detectors..
Indium phosphide, Feedback phenomena, Hydrogen sensors, Metal-insulator-semiconductor structures, Temkin isotherm.
F. ŠROBÁR, O. PROCHÁZKOVÁ, Negative feedback phenomena in InP-based hydrogen detectors, Optoelectronics and Advanced Materials - Rapid Communications, 6, 11-12, November-December 2012, pp.1089-1091 (2012).
Submitted at: Sept. 26, 2012
Accepted at: Oct. 30, 2012
Optoelectronics and Advanced Materials - Rapid Communications
(2023): 0.5 - 2023 Journal Citation Reports (Clarivate Analytics, 2024)
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