Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.
JUNWEI XU1, LEI ZHANG1,* , HUI LIN1, QUAN JIANG1
Top emission organic light emitting diodes with a maximum luminance approaching 13300cd/m2 and an improved ambient stability is fabricated by applying the thermal annealing at 200℃ in vacuum after the deposition of Aluminum/Nickel-Chromium/4,4′,4″-tris[3-methylphenyl(phenyl)amino]triphenylamine: 2,3,5,6-tetrafluoro-7,7,8,8-tetracy anop -quinodimethane(Al/Ni-Cr/m-MTDATA:F4TCNQ) hole-injection stack structure. The increased luminance and relatively stable performance are attributed to the modification of doped hole-injection material morphology and changes in the metal-organic interface induced by annealing. The thermally optimized surface and nanoscale grain networks provide stronger organic contact, higher electron-hole pairs generation and higher hole mobility compared with surface and bulk morphology of unannealed hole-injection stack structure. Formation of chemical bonds across the metal-organic interface is expected as another explanation of the enhanced hole-injection efficiency..
Top emission organic light emitting diodes(TEOLEDs), Thermal annealing in vacuum, Doped hole-injection layer, Surface morphology, Metal-organic interface.
JUNWEI XU, LEI ZHANG, HUI LIN, QUAN JIANG, Nanoscale control of doped organic hole-injection layer in thermally annealed top emission organic light emitting diode, Optoelectronics and Advanced Materials - Rapid Communications, 7, 11-12, November-December 2013, pp.817-821 (2013).
Submitted at: June 30, 2012
Accepted at: Nov. 7, 2013
Optoelectronics and Advanced Materials - Rapid Communications
(2022): 0.5 - 2022 Journal Citation Reports (Clarivate Analytics, 2023)
Active accounts were imported to the new platform and assigned a random password by default. In order to access your account you need to access the login page and go through the Lost Password dialog (involves the system sending you an email with instructions) in order to reset your password. This step is necessary as passwords are kept in hashed form and the new platform uses modern hashing algorithms incompatible with the previous ones.