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N umerical evaluation of grading benefits in Cd S/CdZnTe band gap back graded solar cells

YINGHUI SUN1,* , PINGXIONG YANG1, YE CHEN1, LIYAN SHANG1, JUNHAO CHU1

Affiliation

  1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineeri ng, East China Normal University, Shanghai 200241, People's Republic of China

Abstract

Recently, i ncorporation of band gap graded structure into Cd Te absorption layer has been proposed for Cd Te based solar cells. In the present work, we numerically investigate t he effects of band gap gradation on photovoltaic characteristics for CdS/Cd ZnTe band gap back graded solar cells Dependences of short circuit current density, open circuit voltage, and conversion efficiency on the grading strength are obtained and analyze d . Moreover, impact s of minority carrier diffusion length of band gap graded Cd ZnTe layer on the grading benefits for CdS/Cd ZnTe back graded solar cells are discussed in detail.

Keywords

CdS/Cd ZnTe thin film solar cell Graded band gap SCAPS Photovoltaic characteristics Minority carrier diffusion length.

Citation

YINGHUI SUN, PINGXIONG YANG, YE CHEN, LIYAN SHANG, JUNHAO CHU, N umerical evaluation of grading benefits in Cd S/CdZnTe band gap back graded solar cells, Optoelectronics and Advanced Materials - Rapid Communications, 6, 1-2, January-February 2012, pp.280-283 (2012).

Submitted at: Nov. 12, 2011

Accepted at: Feb. 20, 2012