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Mott conductivity in nanocluster carbon thin films

SHOUNAK DE1,* , S. NIRANAJANA2, B. S. SATYANARAYANA3, MOHAN RAO4

Affiliation

  1. Department of Electronics &Communication Engineering, MIT, Manipal University, Manipal, INDIA 576 104
  2. Department of Biomedical Engineering , MIT,Manipal University, Manipal, INDIA 576 104
  3. 40, Sreeniketan, NDSE 24, Vasundhara Enclave, New Delhi 110096
  4. Department of Physics, MIT, Manipal University, Manipal, INDIA 576 104

Abstract

Electrical conductivity measurements have been carried out on Nanocluster carbon thin films in the temperature range of 123K- 303K. These films are deposited onto silicon substrate by room tempearture based Cathodic Arc process. Extracted parameters and analysis of data verified that Mott’s variable range hopping(VRH) conductivity describes the transport mechanism for Nanocluster carbon thin films in this temperature range.These also suggests that density of states at the fermi-level is constant at this temperature range. Typical density of states found to be 1.527x1017 cm-3 eV-1..

Keywords

Nanocluster carbon thin film , Cathodic Arc process , Sp2 and sp3 bonding , Variable range hopping.

Citation

SHOUNAK DE, S. NIRANAJANA, B. S. SATYANARAYANA, MOHAN RAO, Mott conductivity in nanocluster carbon thin films, Optoelectronics and Advanced Materials - Rapid Communications, 3, 12, December 2009, pp.1365-1367 (2009).

Submitted at: Nov. 13, 2009

Accepted at: Nov. 23, 2009