Abstract
The influence of InN crystal symmetry (zincblende and wurtzite) on low-field and high-field electron transport is studied by the Monte Carlo method. Calculations are made using a nonparabolic effective mass energy band model. Ionized impurity, acoustic phonon, polar optical phonon, intervalley and dislocation scattering are included in the simulation. It is found that at a field of 35 kV/cm that the peak electron drift velocity is 4.2x107 cm/s for the zincblende InN. The peak velocity is about 20% higher in wurtzite InN (5.1x107 versus 4.2x107 cm/s) and reaches at a field of 25 kV/cm..
Keywords
Monte Carlo, Electron transport, Dislocation scattering, İndium nitride.
Citation
M. AKARSU, S. KARAKAYA, S. AYDOGU, O. OZBAS, Monte Carlo study of electron transport in zincblende and wurtzite InN, Optoelectronics and Advanced Materials - Rapid Communications, 5, 5, May 2011, pp.534-537 (2011).
Submitted at: Jan. 31, 2011
Accepted at: May 31, 2011