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M. NEGOITA1,* , J. NEAMTU1, VIOREL-CIPRIAN ONICA1
When we refer to transport, we take into consideration the transport of electrons in the lattice and the scattering processes, but also the tunneling of electrons. We calculated through computerized models the magnetic properties of the layers. This should help us in a better implementation of electronic devices based on the magnetic properties of the elements that make those devices.
Giant magnetoresistance, Tunneling magnetoresistance.
M. NEGOITA, J. NEAMTU, VIOREL-CIPRIAN ONICA, Modeling of magneto-transport properties for giant magneto-resistance and tunneling magneto-resistance structures, Optoelectronics and Advanced Materials - Rapid Communications, 2, 10, October 2008, pp.646-649 (2008).
Submitted at: July 24, 2008
Accepted at: Oct. 2, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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