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A. BADEV1,* , I. ILIEV1
The ZrTiO4 system is one of the classic materials used for microwave devices such as microwave dielectric resonators, but unfortunately it has τf = 58 ppm/deg. A technological disadvantage of this material is its high sintering temperature (1600 °C). For the synthesis of ZrTiO4 (ZT) with zero τf , there have often been made substitutions of Zr4+ for Sn4+ - the material ZST, and for lowering the sintering temperature, different sintering aids such as ZnO, CuO, V2O5 have been used. As Cerium is of fourth valence and will not disrupt the electro neutrality of the mixed oxide, it is interesting to investigate the microwave properties of ZT at a partial substitution of Zr4+ or Ti4+ for Ce4+. It has been revealed that for small concentrations of CeO2 the microwave properties of ZT do not worsen, the temperature compensation is achieved for τf Æ0, and the sintering temperature lowers to 1300 °C.
Sintering temperature, Microwave properties, Structure.
A. BADEV, I. ILIEV, Microwave properties of ZrTiO4 with partial substitution of Zr4+ and Ti4+for Ce4+, Optoelectronics and Advanced Materials - Rapid Communications, 2, 1, January 2008, pp.57-59 (2008).
Submitted at: Dec. 20, 2007
Accepted at: Jan. 16, 2008
Optoelectronics and Advanced Materials - Rapid Communications
(2024): Impact Factor = 0.4 - Journal Citation Reports (Clarivate Analytics, 2025)
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