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Microstructural studies of GeS2-In2S3-CsI chalcohalide glasses by Raman scattering

H. Z. TAO1,* , C. G. LIN1, Y. Q. GONG2, S. MAO1, X. J. ZHAO1

Affiliation

  1. Key Laboratory of Silicate Materials Science and Engineering (Wuhan University of Technology), Ministry of Education, 122 Luoshi Road, Wuhan, Hubei 430070, PR China
  2. Key Laboratory of Low Dimensional Materials & Application Technology (Xiangtan University), Ministry of Education, Xiangtan, Hunan 411105, PR China

Abstract

Raman spectra of samples on three serials within GeS2-In2S3-CsI pseudo-ternary system were probed systematically in this paper. XRD patterns and Raman spectra of Sample A (1/3In2S3·2/3CsI) and B (1/3InS·2/3CsI) reveal that InS4-xIx new structural units are easily formed. The Raman spectrum of Sample B further indicates that bridged units In2S6-xIx (x≥2) are preferentially formed when two tetrahedra InS4-xIx (x≥1) meet. The added Cs+ ions are coordinated as I- anions for their nearest neighbors which play the role of charge balance of InS4-xIx tetrahedra. Based on this micro-structural model, Raman spectral evolution of GeS2-In2S3-CsI glasses was reasonably explained.

Keywords

Glasses, Optical materials, Raman spectroscopy.

Citation

H. Z. TAO, C. G. LIN, Y. Q. GONG, S. MAO, X. J. ZHAO, Microstructural studies of GeS2-In2S3-CsI chalcohalide glasses by Raman scattering, Optoelectronics and Advanced Materials - Rapid Communications, 2, 1, January 2008, pp.29-32 (2008).

Submitted at: Dec. 17, 2007

Accepted at: Jan. 16, 2008